发明名称 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide plasma treatment capable of detecting abnormal discharge in real time in a chamber that is generated simultaneously with the progress of plasma treatment. <P>SOLUTION: This plasma treatment device comprises a chamber (1) equipped with a wafer stage (3) on which a substrate (2) to be treated is set, and works the substrate (2) by radiating plasma (4). A photon detecting sensor (5) for measuring an ultraviolet light induced current is installed at the periphery of the substrate setting surface (3a) of the wafer stage (3). Therefore, the generation of abnormal discharge is detected in real time by the output change of the photon detecting sensor (5). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005340632(A) 申请公布日期 2005.12.08
申请号 JP20040159531 申请日期 2004.05.28
申请人 HANDOTAI RIKOUGAKU KENKYU CENTER:KK 发明人 SAGAWA SEIJI;NISHIKAWA SATORU;KADOMURA SHINGO
分类号 H05H1/00;C23F1/00;G01R31/12;H01J37/32;H01L21/205;H01L21/3065 主分类号 H05H1/00
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