发明名称 |
PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide plasma treatment capable of detecting abnormal discharge in real time in a chamber that is generated simultaneously with the progress of plasma treatment. <P>SOLUTION: This plasma treatment device comprises a chamber (1) equipped with a wafer stage (3) on which a substrate (2) to be treated is set, and works the substrate (2) by radiating plasma (4). A photon detecting sensor (5) for measuring an ultraviolet light induced current is installed at the periphery of the substrate setting surface (3a) of the wafer stage (3). Therefore, the generation of abnormal discharge is detected in real time by the output change of the photon detecting sensor (5). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005340632(A) |
申请公布日期 |
2005.12.08 |
申请号 |
JP20040159531 |
申请日期 |
2004.05.28 |
申请人 |
HANDOTAI RIKOUGAKU KENKYU CENTER:KK |
发明人 |
SAGAWA SEIJI;NISHIKAWA SATORU;KADOMURA SHINGO |
分类号 |
H05H1/00;C23F1/00;G01R31/12;H01J37/32;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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