| 摘要 |
The semiconductor device comprises a first well 14 of a first conduction type formed in a semiconductor substrate 10 ; a second well 16 of a second conduction type formed in the first well 14 ; and a transistor 40 including a control gate 18 formed of an impurity region of the first conduction type formed in the second well 16 , a first impurity diffused layer 26 and a second impurity diffused layer 33 formed with a channel region 25 therebetween, and a floating gate electrode 20 formed on the channel region 25 and the control gate 18 with a gate insulation film 24 therebetween. The control gate 18 is buried in the semiconductor substrate 10 , which makes it unnecessary to form the control gate 18 on the floating gate electrode 20 . Thus, the memory transistor and the other transistors, etc. can be formed by the same fabricating process. Thus, the fabrication processes can be less and the semiconductor device can be inexpensive.
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