Method of fabricating shallow trench isolation by ultra-thin simox processing

摘要

The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the trench. In the present invention, the isolation regions are formed by utilizing a selective ion implantation process that creates an oxygen implant region near the upper surface of the substrate. Upon a subsequent anneal step, the oxygen implant region is converted into an isolation region that has an upper surface that is substantially coplanar with the upper surface of the substrate.