发明名称 |
DUAL-FREQUENCY SILICON NITRIDE FOR SPACER APPLICATION |
摘要 |
A silicon nitride spacer material for use in forming a PFET device and a method for making the spacer includes the use of a dual-frequency plasma enhanced CVD process wherein the temperature is in the range depositing a silicon nitride layer by means of a low-temperature dual-frequency plasma enhanced CVD process, at a temperature in the range 400° C. to 550° C. The process pressure is in the range 2 Torr to 5 Torr. The low frequency power is in the range 0 W to 50 W, and the high frequency power is in the range 90 W to 110 W. The precursor gases of silane, ammonia and nitrogen flow at flow rates in the ratio 240:3200:4000 sccm. The use of the silicon nitride spacer of the invention to form a PFET device having a dual spacer results in a 10%-15% performance improvement compared to a similar PFET device having a silicon nitride spacer formed by a RTCVD process.
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申请公布号 |
US2005287823(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040710257 |
申请日期 |
2004.06.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RAMACHANDRAN RAVIKUMAR;KELLIHER JAMES T.;NARASIMHA SHREESH;SLEIGHT JEFFREY W. |
分类号 |
H01L21/31;H01L21/318;H01L21/44;H01L21/8234;H01L21/8238;(IPC1-7):H01L21/31;H01L21/823 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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