Chemical vapor deposition apparatus and film deposition method

摘要

A chemical vapor deposition apparatus has a vacuum processing chamber, a susceptor for holding a plurality of substrates each placed with a film deposition surface thereof facing downward; a heater disposed above the susceptor; a first barrier gas supply port for supplying a barrier gas to the upper surface of the susceptor; and a second barrier gas supply port for supplying the barrier gas to the upper surface of the heater. The barrier gas supplied from the first barrier gas supply port and the barrier gas supplied from the second barrier gas supply port have their flow rates controlled independently. By properly setting the ratio between the amount of the barrier gas supplied from the first barrier gas supply port and the amount of the barrier gas supplied from the second barrier gas supply port and the ratio between the amount of the barrier gas supplied and the amount of a raw material gas supplied, it becomes possible to form a film which is reduced in the number of particles adhered thereto.