| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a memory card by significantly reducing the stress of a memory cell of a nonvolatile semiconductor memory by updating of a deletion table which occurs in data writing. <P>SOLUTION: When writing data to the memory card, a writing destination address is acquired from the deletion table formed in a deletion table storage part 15 of a RAM 11 to write the data, and a writing address is then updated to an address conversion table. After the writing destination address registered in the deletion table is deleted, an address in which old data before updating are written is registered. The deletion table is managed by the RAM 11, whereby the rewriting frequency of a flash memory 3 involved by updating of the deletion table is dispensed with, and the stress to the memory cell can be significantly reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
