| 摘要 |
<p>In order to further develop an electronic memory component (100 or 100'), comprising at least one memory cell matrix (10) which is embedded in and/or let into at least one doped receiving substrate (20), in such a way that a light incidence taking the form of a so-called light attack is detected directly or sensed immediately without dead times (=contribution to chip development), it is proposed,-that the receiving substrate (20) be covered and/or surrounded at least partially and/or on at least one of its surfaces remote from the memory cell matrix (10) by at least one top/protective substrate (30) oppositely doped to the receiving substrate (20) and-that at least one of the substrates (20 or 30), for example the receiving substrate (20) and/or in particular the top/protective substrate (30), be in contact (12a or 12b) or connection (32) with at least one circuit arrangement (24 or 34 respectively) for the detection of voltages or currents caused by charge carriers generated upon light incidence.</p> |
