发明名称 |
Non-volatile semiconductor memory device and method for recovering data in non-volatile semiconductor memory device |
摘要 |
A method and device for recovering data in a non-volatile semiconductor memory device that may include controlling a reference current by the non-volatile semiconductor memory device, reading data of at least one memory cell based on the controlled reference current, storing the read data in a buffer memory, and writing the data stored in the buffer memory to the at least one memory cell.
|
申请公布号 |
US7518927(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20060606228 |
申请日期 |
2006.11.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG TAE-JIN;CHOI JEONG-UN |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|