发明名称 Non-volatile semiconductor memory device and method for recovering data in non-volatile semiconductor memory device
摘要 A method and device for recovering data in a non-volatile semiconductor memory device that may include controlling a reference current by the non-volatile semiconductor memory device, reading data of at least one memory cell based on the controlled reference current, storing the read data in a buffer memory, and writing the data stored in the buffer memory to the at least one memory cell.
申请公布号 US7518927(B2) 申请公布日期 2009.04.14
申请号 US20060606228 申请日期 2006.11.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG TAE-JIN;CHOI JEONG-UN
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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