| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of detecting potentials at predetermined depths inside a semiconductor device. <P>SOLUTION: This is embodied as a semiconductor device. The semiconductor device has a potential measuring trench extending from the surface of the substrate in a depth direction. In the potential measuring trench, an insulating film is formed on its side surface and an insulating film is not formed partly or entirely on a bottom surface. The semiconductor device includes a potential measuring electrode for detecting the potential of the bottom surface of the potential measuring trench. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
