发明名称
摘要 A threshold compensating circuit generates a bias potential VBIAS, that is, a threshold voltage of a MOS transistor offset by a given value. A gate-source voltage having compensation for variation in threshold voltage is thus applied to a transistor. By using a differential amplifier having this transistor as a current source, a voltage down-converter less susceptible to variation in threshold voltage caused by process variation and temperature can be implemented.
申请公布号 JP4301760(B2) 申请公布日期 2009.07.22
申请号 JP20020049685 申请日期 2002.02.26
申请人 发明人
分类号 G11C11/413;H01L21/8238;G05F1/46;G05F1/56;G11C11/407;G11C11/4074;H01L21/822;H01L27/04;H01L27/092;H01L27/10 主分类号 G11C11/413
代理机构 代理人
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