METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE

摘要

Methods for forming a fin field effect transistor (FinFET) device structure are provided. The method includes providing a first fin structure and a second fin structure extending above a substrate and forming an isolation structure over the substrate, and the an upper portion of the first fin structure and an upper portion of the second fin structure protrudes from the isolation structure. The method also includes forming a first transistor and a second transistor on the first fin structure and the second fin structure, and the first transistor includes a first gate dielectric layer. The method further includes forming an inter-layer dielectric (ILD) structure between the first transistor and the second transistor, and a portion of the first gate dielectric layer above the isolation structure is in direct contact with a sidewall of the ILD structure.

主权项

1. A method for forming a fin field effect transistor (FinFET) device structure, comprising:
providing a first fin structure and a second fin structure extending above a substrate; forming an isolation structure over the substrate, wherein the an upper portion of the first fin structure and an upper portion of the second fin structure protrudes from the isolation structure; forming a first transistor and a second transistor on the first fin structure and the second fin structure, wherein the first transistor comprises a first gate dielectric layer; and forming an inter-layer dielectric (ILD) structure between the first transistor and the second transistor, wherein a portion of the first gate dielectric layer above the isolation structure is in direct contact with a sidewall of the ILD structure.