IMAGING DEVICE, MODULE, AND ELECTRONIC DEVICE

摘要

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A transistor is provided between a power supply line and a photoelectric conversion element. Exposure is performed by turning on the transistor. Imaging data is retained in a charge retention portion by turning off the transistor.

主权项

1. An imaging device comprising:
a first transistor including a first oxide semiconductor in a region where a channel is formed; a second transistor including a second oxide semiconductor in a region where a channel is formed; a third transistor including a third oxide semiconductor in a region where a channel is formed; a fourth transistor; a fifth transistor; a first capacitor; a second capacitor, and a photoelectric conversion element, one electrode of the photoelectric conversion element being electrically connected to one of a source and a drain of the first transistor and one electrode of the first capacitor, and the other electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor; wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor, one electrode of the second capacitor, and a gate of the fourth transistor, and wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor.