发明名称 THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY USING THE SAME
摘要 A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.
申请公布号 US2017110528(A1) 申请公布日期 2017.04.20
申请号 US201615199469 申请日期 2016.06.30
申请人 Samsung Display Co., Ltd., 发明人 Kim Eunhyun;Kim Taeyoung;Park Hyehyang;Yang Shinhyuk
分类号 H01L27/32;H01L29/423;H01L27/12;H01L29/786 主分类号 H01L27/32
代理机构 代理人
主权项 1. A thin film transistor substrate, comprising: a substrate; a lower gate electrode arranged over the substrate; a semiconductor layer arranged over the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region; and an upper gate electrode arranged over the semiconductor layer and overlapping the semiconductor layer and the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by a through hole.
地址 Yongin-si KR