发明名称 MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS
摘要 A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO.
申请公布号 US2017110514(A1) 申请公布日期 2017.04.20
申请号 US201615338857 申请日期 2016.10.31
申请人 Unity Semiconductor Corporation 发明人 Wu Jian;Meyer Rene
分类号 H01L27/24;H01L45/00 主分类号 H01L27/24
代理机构 代理人
主权项 1. (canceled)
地址 Sunnyvale CA US