发明名称 |
DRIVER CIRCUIT CHARGING CHARGE NODE |
摘要 |
Disclosed is a driver circuit. The driver circuit includes a clamp transistor, a comparison voltage transistor, an amplification transistor, a bias transistor, and a charge circuit. The comparison voltage is configured to provide a comparison voltage. The amplification transistor includes an amplification gate connected to a first node of the clamp transistor, a first amplification node configured to receive the comparison voltage, and a second amplification node connected to a gate of the clamp transistor. The bias transistor is configured to supply a bias voltage. The charge circuit is at least one of configured to drain a current from the first node through the clamp transistor and configured to supply a current to the first node through the clamp transistor. |
申请公布号 |
US2017110197(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615189136 |
申请日期 |
2016.06.22 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
PARK Hyunkook;LEE Yeongtaek;BYEON Daeseok |
分类号 |
G11C16/28;H03K5/24;G11C16/16;G11C16/04;G11C16/10;H03K5/08;G11C16/08 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
1. A driver circuit, comprising:
a clamp transistor including a clamp gate, a first clamp node, and a second clamp node connected to a charge node; a comparison voltage transistor including a comparison voltage gate configured to receive a reference voltage, a first comparison voltage node configured to receive a first voltage, and a second comparison voltage node configured to output a comparison voltage; an amplification transistor including an amplification gate connected to the charge node, a first amplification node connected to the second comparison voltage node of the comparison voltage transistor and configured to receive the comparison voltage, and a second amplification node connected to the clamp gate of the clamp transistor; a bias transistor including a bias gate configured to receive a bias voltage, a first bias node connected to the clamp gate of the clamp transistor, and a second bias node configured to receive a second voltage; and a charge circuit, the charge circuit being one of configured to drain a current from the charge node through the clamp transistor and configured to supply a current to the charge node through the clamp transistor. |
地址 |
Suwon-si KR |