发明名称 DRIVER CIRCUIT CHARGING CHARGE NODE
摘要 Disclosed is a driver circuit. The driver circuit includes a clamp transistor, a comparison voltage transistor, an amplification transistor, a bias transistor, and a charge circuit. The comparison voltage is configured to provide a comparison voltage. The amplification transistor includes an amplification gate connected to a first node of the clamp transistor, a first amplification node configured to receive the comparison voltage, and a second amplification node connected to a gate of the clamp transistor. The bias transistor is configured to supply a bias voltage. The charge circuit is at least one of configured to drain a current from the first node through the clamp transistor and configured to supply a current to the first node through the clamp transistor.
申请公布号 US2017110197(A1) 申请公布日期 2017.04.20
申请号 US201615189136 申请日期 2016.06.22
申请人 Samsung Electronics Co., Ltd. 发明人 PARK Hyunkook;LEE Yeongtaek;BYEON Daeseok
分类号 G11C16/28;H03K5/24;G11C16/16;G11C16/04;G11C16/10;H03K5/08;G11C16/08 主分类号 G11C16/28
代理机构 代理人
主权项 1. A driver circuit, comprising: a clamp transistor including a clamp gate, a first clamp node, and a second clamp node connected to a charge node; a comparison voltage transistor including a comparison voltage gate configured to receive a reference voltage, a first comparison voltage node configured to receive a first voltage, and a second comparison voltage node configured to output a comparison voltage; an amplification transistor including an amplification gate connected to the charge node, a first amplification node connected to the second comparison voltage node of the comparison voltage transistor and configured to receive the comparison voltage, and a second amplification node connected to the clamp gate of the clamp transistor; a bias transistor including a bias gate configured to receive a bias voltage, a first bias node connected to the clamp gate of the clamp transistor, and a second bias node configured to receive a second voltage; and a charge circuit, the charge circuit being one of configured to drain a current from the charge node through the clamp transistor and configured to supply a current to the charge node through the clamp transistor.
地址 Suwon-si KR