发明名称 Slurry composition and method of substrate polishing
摘要 Slurry composition and a method of substrate polishing used in chemical mechanical polishing (CMP). The present invention concerns a slurry composition containing a polishing agent and a water soluble polymer. The slurry composition contains a water soluble polymer that has a solubility parameter in the range of 9.0 to 14.0 and that may contain hetero atoms at a level sufficient to lower the polishing rate near the edges of the polished substrate defined as the region within 1 mm of the outer edge of the polished substrate to a level below the mean polishing rate of the polished substrate. The water soluble polymer may have a mean molecular weight in the range of 200 to about 3,000,000, and the mean molecular weight may be in the range of 200 to 110,000 if hetero atoms are present in the main-chain structure and the SP value is under 9.5.
申请公布号 US9528031(B2) 申请公布日期 2016.12.27
申请号 US201414784527 申请日期 2014.04.25
申请人 Cabot Microelectronics Corporation 发明人 Kitamura Hiroshi;Masuda Tsuyoshi;Matsumura Yoshiyuki
分类号 C09K13/00;C09G1/04;C09G1/00 主分类号 C09K13/00
代理机构 代理人 Omholt Thomas
主权项 1. A chemical-mechanical polishing composition comprising a polishing agent, and a water soluble polymer having a mean molecular weight of about 200 to about 3,000,000 that has a solubility parameter (SP) in the range of 9.0 to 14.0, wherein the water soluble polymer has one or more hetero atoms.
地址 Aurora IL US