发明名称 PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 Polycrystalline silicon having a low P, B, and other extraneous element contamination is produced by performing at least one process step in a cleanroom of class 1 to 100,000, wherein air is conducted into the cleanroom through at least one filter for separating particles ≧1 μm, and one filter for particles <1 μm, the filters being made of low contamination materials.
申请公布号 US2016273099(A1) 申请公布日期 2016.09.22
申请号 US201415032227 申请日期 2014.10.17
申请人 WACKER CHEMIE AG 发明人 WOCHNER Hanns
分类号 C23C16/442;C01B33/03 主分类号 C23C16/442
代理机构 代理人
主权项
地址 München DE