发明名称 NOVEL CHEMICAL TREATMENT FOR LITHOGRAPHY IMPROVEMENT IN A NEGATIVE TONE DEVELOPMENT PROCESS
摘要 A material layer is formed on a substrate. A negative tone photoresist layer is formed on the material layer. An exposure process is performed on the negative tone photoresist layer. A post-exposure bake (PEB) process is performed on the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).
申请公布号 KR20160111317(A) 申请公布日期 2016.09.26
申请号 KR20150162375 申请日期 2015.11.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LAI WEI HAN;CHANG CHING YU;WU CHENG HAN;WANG SIAO SHAN;LIN CHIN HSIANG
分类号 H01L21/027;G03F7/038;G03F7/039 主分类号 H01L21/027
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