发明名称 |
NOVEL CHEMICAL TREATMENT FOR LITHOGRAPHY IMPROVEMENT IN A NEGATIVE TONE DEVELOPMENT PROCESS |
摘要 |
A material layer is formed on a substrate. A negative tone photoresist layer is formed on the material layer. An exposure process is performed on the negative tone photoresist layer. A post-exposure bake (PEB) process is performed on the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA). |
申请公布号 |
KR20160111317(A) |
申请公布日期 |
2016.09.26 |
申请号 |
KR20150162375 |
申请日期 |
2015.11.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LAI WEI HAN;CHANG CHING YU;WU CHENG HAN;WANG SIAO SHAN;LIN CHIN HSIANG |
分类号 |
H01L21/027;G03F7/038;G03F7/039 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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