半导体物质之异向性蚀刻方法,申请号TW020919-传众专利搜索

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发明名称	半导体物质之异向性蚀刻方法
摘要
申请公布号	TW013551	申请公布日期	1973.09.01
申请号	TW020919	申请日期	1972.09.16
申请人	西方电器公司	发明人	P.F. SCHMIDT;W.C. ERDMAN
分类号	H01L	主分类号	H01L
代理机构		代理人	林敏生台北巿南京东路二段一二五号七楼伟成第一大楼
主权项
地址	美国加利福尼亚州日谷维兰道第8150号

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