发明名称 |
THIN FILM METALLIZATION PROCESSES FOR MICROCIRCUITS |
摘要 |
<p>Selective anodic oxidation is employed to pattern thin metallic films in the fabrication of printed circuit boards and integrated microcircuits to provide "inlaid" metallization geometry and thereby eliminate the need for selective etching of metal films. The total anodic conversion of metallic thin films to the corresponding oxide is demonstrated. Standard photolithographic masking techniques are employed to achieve selective anodic oxidation in the delineation of a single metal film, and also for each successive metallization layer in the fabrication of integrated microcircuits having multilevel, insulated, interconnecting metallization patterns.</p> |
申请公布号 |
CA943266(A) |
申请公布日期 |
1974.03.05 |
申请号 |
CA19700085648 |
申请日期 |
1970.06.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCMAHON, WILLIAM R.;RAMSEY, THOMAS H. (JR.) |
分类号 |
H01L21/768;H01L23/29;H01L23/522;H01L49/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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