发明名称 |
IMAGE SENSOR AND METHODS FOR IMAGE SENSOR FABRICATION |
摘要 |
An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer. |
申请公布号 |
HK1216802(A1) |
申请公布日期 |
2016.12.02 |
申请号 |
HK20160104841 |
申请日期 |
2016.04.27 |
申请人 |
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发明人 |
ZHENG, Yuanwei;CHEN, Gang;MAO, Duli;TAI, Dyson H. H;HSIUNG, Chih-Wei;KUMAR, Arvind |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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