| 摘要 |
<p>This bipolar transistor structure is intended for large scale integration. It consists of a semi-conductor element with a substrate containing zones of one type of conductivity bordering zones of the opposite type of conductivity and terminating in a flat surface. The zones are surrounded by coatings of insulation and the p n junctions of the bases, emitters and collectors are formed at the interfaces. The supplementary zones of the second type of conductivity are of a lower specific resistance than that of the first type. This reduces the base emitter junction resistance and the outward spread of minority carriers between the electrodes to a minimum.</p> |
