Plating n-conducting regions of semiconductor devices - using photo-electric current to produce thick metal layers

摘要

The n-conducting region of a p-n junction of a semiconductor device is metal plated by irradiating the junction in a plating bath to produce a photo-electric voltage and cause metal deposition at the n-conducting region. The p-conducting region may be plated prior to or during this process using an external voltage source. Method is useful for prodn. of contact layers for diodes or transistors. A thick metal layer can be produced on the n-conducting region. Also the two conducting regions can be coated in a single bath.