发明名称 Metal member, metal member surface processing method, semiconductor device, semiconductor device manufacturing method, and composite molded body
摘要 An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 μs or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.
申请公布号 US9517532(B2) 申请公布日期 2016.12.13
申请号 US201414914061 申请日期 2014.11.10
申请人 DENSO CORPORATION 发明人 Kobayashi Wataru;Hayashi Eiji;Kouda Kazuki
分类号 H01L23/00;B23K26/00;H01L23/31;H01L21/48;H01L23/495 主分类号 H01L23/00
代理机构 Posz Law Group, PLC 代理人 Posz Law Group, PLC
主权项 1. A surface processing method of a metal member in which a metal thin film is arranged on a surface of a base made of a conductive metal material, the surface processing method comprising: forming the metal thin film with a material having at least one of Ni, Au, Pd, and Ag as a main component; melting or evaporating a surface portion of the metal thin film by irradiating the surface of the metal thin film with a laser beam which is pulse-oscillated, and has energy density of 100 J/cm2 or less and a pulse width equal to or less than 1 μs; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating.
地址 Kariya JP