| 摘要 |
PROBLEM TO BE SOLVED: To highly precisely planarize the surface of a semiconductor wafer and the like by displacing the respective parts of the polishing face of a abrasive material against a work face at prescribed reference speed or higher and displacing a polishing area at reference speed or lower on the work face. SOLUTION: The polishing face of a polishing pad 11 is displaced at prescribed speed or more on the surface of the semiconductor wafer 6 in a state, where the semiconductor wafer 6 is rotated at comparatively low speed. The semiconductor wafer 6 is rotated at comparatively low speed and the polishing area is displaced at prescribed speed or below. Namely, the polishing pad 11 is displaced against the semiconductor wafer 6 and a projection part generates depression force for displacing the abrasive grains of the polishing pad 11, when the fine projection part appears on the surface of the semiconductor wafer 6. Thus, the surface of the semiconductor wafer 6 can be highly precisely planarized. |
