Etching method

摘要

Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask.

主权项

1. A method of etching a substrate comprising:
forming a mask layer on a substrate; forming a resist film on the mask layer; forming a concave-convex surface of the resist film; etching the resist film to remove a concave portion of the resist film; exposing the resist film to a plasma under a degeneration condition to increase an etching selectivity of the mask layer over the resist film, the degeneration condition including setting a power supply for generating the plasma to a first power level; etching the mask layer using the resist film which is exposed to plasma under an etching condition, the etching condition including setting the power supply to a second power level which is greater than the first power level; and etching the substrate using the etched mask layer as a mask, to form a concave-convex surface of the substrate, wherein the mask layer comprises:
a SiO2 layer formed on the substrate; anda Ni layer on the SiO2 layer.