发明名称 |
Photodetector with surface plasmon resonance |
摘要 |
Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern. |
申请公布号 |
US9472697(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201514596993 |
申请日期 |
2015.01.14 |
申请人 |
RAYTHEON COMPANY |
发明人 |
Wehner Justin Gordon Adams;Smith Edward Peter Gordon |
分类号 |
H01L31/00;H01L31/101;H01L31/0232;H01L27/142;H01L31/04;H01L31/09 |
主分类号 |
H01L31/00 |
代理机构 |
Lando & Anastasi, LLP |
代理人 |
Lando & Anastasi, LLP |
主权项 |
1. A radiation detector comprising:
a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, the first electrical conductivity type being one of n-type and p-type, the semiconductor absorber layer having a thickness approximately equal to a depletion width of the radiation detector; a semiconductor collector layer having the first electrical conductivity type; a plasmonic resonator abutting a top surface of the semiconductor collector layer and having a grating structure including a plurality of ridges arranged in a regularly repeating pattern, the plasmonic resonator being configured to focus the radiation in the first spectral region into the semiconductor absorber layer; and a barrier positioned between the semiconductor absorber layer and the semiconductor collector layer and physically separating the semiconductor absorber layer from the semiconductor collector layer. |
地址 |
Waltham MA US |