发明名称 Photodetector with surface plasmon resonance
摘要 Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.
申请公布号 US9472697(B2) 申请公布日期 2016.10.18
申请号 US201514596993 申请日期 2015.01.14
申请人 RAYTHEON COMPANY 发明人 Wehner Justin Gordon Adams;Smith Edward Peter Gordon
分类号 H01L31/00;H01L31/101;H01L31/0232;H01L27/142;H01L31/04;H01L31/09 主分类号 H01L31/00
代理机构 Lando & Anastasi, LLP 代理人 Lando & Anastasi, LLP
主权项 1. A radiation detector comprising: a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, the first electrical conductivity type being one of n-type and p-type, the semiconductor absorber layer having a thickness approximately equal to a depletion width of the radiation detector; a semiconductor collector layer having the first electrical conductivity type; a plasmonic resonator abutting a top surface of the semiconductor collector layer and having a grating structure including a plurality of ridges arranged in a regularly repeating pattern, the plasmonic resonator being configured to focus the radiation in the first spectral region into the semiconductor absorber layer; and a barrier positioned between the semiconductor absorber layer and the semiconductor collector layer and physically separating the semiconductor absorber layer from the semiconductor collector layer.
地址 Waltham MA US