III-V MOSFET with strained channel and semi-insulating bottom barrier

摘要

Embodiments include a method for fabricating a semiconductor device and the resulting structure comprising forming a semi-insulating bottom barrier on a semiconductor substrate. A channel is formed on the bottom barrier. A semi-insulating layer is epitaxially formed on the bottom barrier, laterally adjacent to the channel. The semi-insulating layer is formed in such a way that stress is induced onto the channel. A CMOS transistor is formed on the channel.

主权项

1. A semiconductor device comprising:
a substrate; a bottom barrier formed on the substrate, wherein the bottom barrier is semi-insulating; a channel formed on the bottom barrier; a gate structure formed on the channel; a source region and a drain region formed laterally adjacent to the gate structure; a semi-insulating layer epitaxially formed laterally adjacent to the channel on the bottom barrier, wherein the semi-insulating layer induces a strain onto the channel.