| 发明名称 | Diode biased body contacted transistor | ||
| 摘要 | Approaches for body contacted transistors are provided. A method of manufacturing a semiconductor structure includes forming a field effect transistor (FET) including a channel and a gate. The method also includes forming a diode that is electrically connected between the channel and the gate, wherein the diode and channel are contained in a same layer of material. | ||
| 申请公布号 | US9472570(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201414182459 | 申请日期 | 2014.02.18 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Botula Alan B.;Wolf Randy L. |
| 分类号 | H01L27/12;H01L27/06;H01L29/66;H01L21/768;H01L21/84;H01L23/528;H01L27/07;H01L29/861;H01L29/423 | 主分类号 | H01L27/12 |
| 代理机构 | Roberts Mlotkowski Safran Cole & Calderon, P.C. | 代理人 | LeStrange Michael;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
| 主权项 | 1. A method of forming a semiconductor structure, comprising: forming a field effect transistor (FET) including a channel and a gate, wherein the gate comprises a crossbar structure and a leg structure extending orthogonal to the crossbar structure; forming a bar structure that is parallel to and offset from the crossbar structure; and forming a diode that is electrically connected between the channel and the gate, wherein the diode and channel are contained in a same layer of material. | ||
| 地址 | Grand Cayman KY | ||