| 摘要 |
1516537 Semiconductor switching circuits RCA CORPORATION 26 Aug 1975 [3 Sept 1974] 35176/75 Heading H3T In a switching circuit comprising a first device Q 1 A arranged to respond to an input signal V 1 and to switch current into a load RL for the duration of said input signal V1, the turn-off time of QIA is reduced by a feedback path from the output electrode of QIA to the signal input via a charge storage device such as capacitor C1 and a further switching device Q2, turned on momentarily when the main device Q 1A is to be turned off. As shown, the main switching device may include a reciprocally coupled complementary pair of transistors Q1A, Q1B which are both turned on for the duration of the input pulse V1. At the end of V1, transistor Q2 is turned on by the differentiated trailing edge of V1 so that the charge stored in C1 helps to turn off Q1A and hence Q1B. During repetitive operation, the voltage at Y is equal to twice the supply voltage at terminal 10. In Fig. 1 (not shown) Q1B is omitted. In Fig. 2 (not shown) an inductor is included in series with C1 and clamping diodes are connected to Y and to the base of Q1A. In Fig. 3 (not shown) Q2 is replaced by a reciprocally coupled complementary pair of transistors. Fig. 6 (not shown) depicts a four-layer silicon controlled switch having loads in series with the anode and cathode, a first capacitor connected via a first switching device between the anode and a first gate layer and a second capacitor in series with the second switching device connected between the cathode and a second gate layer. FET's or GTO's are envisaged. |
