| 摘要 |
<p>Thyristor with passivated surface which has four regions (4, 1, 3, 2) of alternating type conductivity. They are produced in a monocrystalline semiconductor body (10) between a first and second main surface (11, 12). The first main surface of the body contains a ring-shaped groove coated with a passivating dielectric material. There is a second ring-shaped groove coated with passivating dielectric material in the first surface, which is located around the circumference of the first groove. The second PN junction terminates in the second groove where it is passivated by the dielectric material of the second groove. There is a highly doped surface region of the opposite type conductivity at the interface between the first and second groove.</p> |
