| 发明名称 |
HALBLEITERBAUELEMENT MIT HETEROUEBERGANG |
| 摘要 |
A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain. |
| 申请公布号 |
DE2618733(A1) |
申请公布日期 |
1976.11.11 |
| 申请号 |
DE19762618733 |
申请日期 |
1976.04.28 |
| 申请人 |
SONY CORP. |
发明人 |
MATSUSHITA,TAKESHI;HAYASHI,HISAO;SHIBAZAKI,MITSURU |
| 分类号 |
H01L21/00;H01L21/205;H01L21/314;H01L21/316;H01L21/331;H01L21/337;H01L23/29;H01L23/31;H01L27/06;H01L29/04;H01L29/10;H01L29/16;H01L29/165;H01L29/43;H01L29/45;H01L29/73;H01L29/737;H01L29/80;H01L29/808;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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