发明名称 |
Liquid phase epitaxial process for growing semi-insulating GaAs layers |
摘要 |
Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750 DEG C-850 DEG C.
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申请公布号 |
US3994755(A) |
申请公布日期 |
1976.11.30 |
申请号 |
US19740530336 |
申请日期 |
1974.12.06 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
KAMATH, G. SANJIV;SMITH, BRADLEY W. |
分类号 |
H01L21/208;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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