发明名称 |
Low beam velocity retina for Schottky infrared vidicons |
摘要 |
A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.
|
申请公布号 |
US4005327(A) |
申请公布日期 |
1977.01.25 |
申请号 |
US19750625799 |
申请日期 |
1975.10.28 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
ROOSILD, SVEN A.;SHEPHERD, JR., FREEMAN D.;YANG, ANDREW C. |
分类号 |
H01J29/45;(IPC1-7):H01J29/45;H01J31/49 |
主分类号 |
H01J29/45 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|