发明名称 Low beam velocity retina for Schottky infrared vidicons
摘要 A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.
申请公布号 US4005327(A) 申请公布日期 1977.01.25
申请号 US19750625799 申请日期 1975.10.28
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE 发明人 ROOSILD, SVEN A.;SHEPHERD, JR., FREEMAN D.;YANG, ANDREW C.
分类号 H01J29/45;(IPC1-7):H01J29/45;H01J31/49 主分类号 H01J29/45
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