| 发明名称 |
MANUFACTURING OF DIEELCTRIC THIN FILM |
| 摘要 |
PURPOSE:To coat to form the body-centered cubic structure dielectric thin film consisting of Bi2O3 including Ga2O3 by a sputtering process on the substrate which is heated by using the evaporation mechanism based on ionization by collisiion. |
| 申请公布号 |
JPS5260993(A) |
申请公布日期 |
1977.05.19 |
| 申请号 |
JP19750136957 |
申请日期 |
1975.11.13 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MITSUYU TSUNEO;WASA KIYOTAKA;HAYAKAWA SHIGERU |
| 分类号 |
C04B35/00;C01G29/00;C30B29/22;G02F1/03;G02F1/05;H01B3/10;H01B3/12;H01L41/18;H01L41/39;H03H3/007;H03H3/08;H03H7/30 |
主分类号 |
C04B35/00 |
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