| 发明名称 |
TRANSISTOR PROTECTING CIRCUIT |
| 摘要 |
PURPOSE:To obtain a simple structure for protecting the transistor element from an excess voltage by inserting the diode biased in the reverse direction between the bias feeding points between two electrodes. |
| 申请公布号 |
JPS52111640(A) |
申请公布日期 |
1977.09.19 |
| 申请号 |
JP19760028130 |
申请日期 |
1976.03.17 |
| 申请人 |
FUJITSU LTD |
发明人 |
YOSHIKUBO NORIO;ISHIKAWA AKIRA |
| 分类号 |
H02H7/20;H03K17/08 |
主分类号 |
H02H7/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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