| 摘要 |
In order to fabricate by MBE semiconductor devices, such as junction lasers and light modulators or varactor and impatt diodes, having relatively low series resistance one or more of the following three steps are executed: (1) on the substrate a high conductivity buffer layer is first grown having the same conductivity-type as the substrate; (2) beginning with the high conductivity layer and until all semiconductor layers of the device are fabricated, the growth process is made to be continuous; and (3) the substrate is heated just prior to the growth of the high conductivity layer and under excess pressure of any element in the substrate which has a relatively high vaporization pressure and which tends to evaporate from the heated substrate. Preferably all three steps are performed. |
