| 摘要 |
A semiconductor controlled rectifier comprising a four-layer semicondcutor substrate of pnpn structure, a pair of main electrodes in contact with the outer p-type and n-type layers respectively, and a gate electrode in contact with one of the intermediate layers forming a pn junction between it and the outer layer adjacent thereto, wherein gate current supplied from the gate electrode flows into the outer layer adjacent to the intermediate layer having the gate electrode thereon across a portion of the pn junction which portion is parallel with the surface of the said outer layer in contact with the main electrode. |
