| 发明名称 | Method for depositing silicon nanocrystals in hollow fibers | ||
| 摘要 | A method for depositing a layer of silicon nanocrystals upon the inside surface of hollow fibers is disclosed. In particular, the method includes inserting a hollow glass fiber into a solution of hydrogen silsesquioxane, removing the solvent and heating the hollow glass fiber to a temperature suitable to form silicon nanocrystals, and subsequently cooling the hollow glass fiber. | ||
| 申请公布号 | US9452446(B2) | 申请公布日期 | 2016.09.27 |
| 申请号 | US200912934125 | 申请日期 | 2009.03.31 |
| 申请人 | The Governors of the University of Alberta | 发明人 | Veinot Jonathan;Rodriguez Jose Roberto;Bianucci Pablo;Meldrum Al |
| 分类号 | C30B7/14;C30B29/06;C30B29/66;C30B30/00;C30B7/06;B05D7/22;B82Y15/00;B82Y20/00;B82Y30/00;C01B33/021;C01B33/023;C30B28/04;C30B29/60 | 主分类号 | C30B7/14 |
| 代理机构 | Bereskin & Parr LLP/S.E.N.C.R.L., s.r.l. | 代理人 | Bereskin & Parr LLP/S.E.N.C.R.L., s.r.l. ;Fenwick Michael |
| 主权项 | 1. A method for depositing a layer of silicon nanocrystals on an inner surface of a hollow fiber and obtaining whispering gallery mode resonator, the method comprising: a) inserting a tip of the hollow fiber into a solution of hydrogen silsesquloxane (HSQ) in a suitable solvent at an angle of about 70° to about 90° between the fiber and the solution, wherein an inner surface of the fiber is coated with the HSQ solution by capillary action; b) heating the coated hollow fiber in a reducing atmosphere under conditions to remove the solvent; c) heating the hollow fiber in a reducing atmosphere to a temperature suitable to form silicon nanocrystals; and d) cooling the hollow fiber to obtain the whispering gallery mode resonator. | ||
| 地址 | Edmonton, Alberta CA | ||