| 发明名称 | Switching film structure for magnetic random access memory (MRAM) cell | ||
| 摘要 | An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ. | ||
| 申请公布号 | US9461094(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201414334554 | 申请日期 | 2014.07.17 |
| 申请人 | QUALCOMM INCORPORATED | 发明人 | Li Xia;Chen Wei-Chuan;Lu Yu;Lee Kangho;Kang Seung Hyuk |
| 分类号 | G11C11/00;H01L27/22;H01L43/08;G11C11/16 | 主分类号 | G11C11/00 |
| 代理机构 | Seyfarth Shaw LLP | 代理人 | Seyfarth Shaw LLP |
| 主权项 | 1. A magnetic random access memory (MRAM) cell, comprising: a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and a bidirectional diode selector, comprising a selector electrode directly coupled to the pin layer, and a selector layer directly coupled to the capping layer of the MTJ, to enable access to the MTJ. | ||
| 地址 | San Diego CA US | ||