Electro-optical device, electronic apparatus and semiconductor device

摘要

In an element substrate of an electro-optical device, MOS transistors (electrostatic protection element) are provided on an opposite side to a light transmitting substrate with respect to the insulating film, and heat dissipation layers that overlap drain regions of the MOS transistor in a plan view are provided between the light transmitting substrate and the insulating film. In addition, the heat dissipation layers are connected to the drain regions through contact holes which are formed in the insulating film.

主权项

1. An electro-optical device comprising:
an insulating film that is provided above one surface side of a substrate; a pixel switching element that is provided above the insulating film; a light transmitting interlayer insulating film that is provided above the pixel switching element; a pixel electrode that is provided above the light transmitting interlayer insulating film and being electrically connected to a drain of the pixel switching element through the light transmitting interlayer insulating film; a data line that is provided above the one surface side of the substrate and being connected to a source of the pixel switching element; a signal line that is provided above the one surface side of the substrate and being connected to a source of the pixel switching element; a terminal that is provided above the one surface side of the substrate and being connected to the signal line for pixel signals; a potential line that is provided on one surface side of the substrate; an electrostatic protection element that is configured as a diode element which is provided above the insulating film, wherein the electrostatic protection element is electrically connected between the signal line and the potential line; and a heat dissipation layer that overlaps a pn junction area of the diode element in a plan view between the substrate and a portion in which a thickness of the insulating film is equal to or greater than 200 nm and is equal to or less than 1000 nm, wherein the light transmitting insulating film is formed above the signal line, the potential line, the electrostatic protection element, and the heat dissipation layer.