| 摘要 |
A semiconductor integrated Darlington circuit is provided comprising two transistors, two resistors, and a diode within a body of semiconductor material. The emitter region of one of the transistors completely encircles the emitter region of the other transistor at a surface of the body, whereby certain paths for current from the base contact of the one transistor beneath and around the emitter region thereof are significantly longer than those present in prior art devices, thus contributing to a higher value of one of the device resistors. |
