| 摘要 |
One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic%, with a remainder being Cu and inevitable impurities, and a conductivity à (%IACS) is within the following range when the content of Mg is given as A atomic%,
Another aspect of this copper alloy for an electronic device is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic% and Zn at a content of 0.1 to 10 atomic%, with a remainder being Cu and inevitable impurities, and a conductivity à (%IACS) is within the following range when the content of Mg is given as A atomic% and the content of Zn is given as B atomic%, |
