发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a manufacturing cost by increasing operation speed of a dynamic type RAM and the like adopting a standby current reducing(SCRC) system, and reducing chip size. SOLUTION: A dynamic type RAM and the like are provided with a main power source voltage supply line MVCY and the like transmitting power source voltage VCC, a sub-power source voltage supply line SVCY and the like transmitting selectively a first voltage being VCC or lower than VCC by a prescribed value, a main ground potential supply line MVSY and the like transmitting a ground potential VSS, and a sub-ground potential supply line SVSY and the like transmitting selectively a second voltage being VSS or higher than VSS by the prescribed value. In this case, a plurality of switch circuits are provided between the main power source voltage supply line MVCY and the like and the power source voltage supply line SVCY and the like or the main ground potential supply line MVSY and the like and the sub-ground potential supply line and the like, and these switch circuits are distributed and arranged on a semiconductor substrate surface CHIP, respectively.
申请公布号 JPH1131385(A) 申请公布日期 1999.02.02
申请号 JP19970197755 申请日期 1997.07.08
申请人 HITACHI LTD 发明人 TANAKA YOSUKE;NARUI SEIJI;NAKAMURA MASAYUKI
分类号 G11C11/413;G11C11/401;G11C11/407 主分类号 G11C11/413
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