| 摘要 |
PURPOSE:To make a picture-quality improvement accompanied with the transfer efficiency improvement of a solid image pickup device possible by making an electrode array specific. CONSTITUTION:The first gate electrode 6, the second gate electrode 5 and input diffusion layer 4 are arranged outside photoelectric conversion part 1; and when applying a signal waveform to part 1, uniform charge can be injected to all the surface of photoelectric conversion part 1. Meanwhile, a FET is formed by input diffusion layer 4 and electrodes 5 and 6, and the inside of the semiconductor substrate under electrode 6 becomes a chain electrode through the inside of the semiconductor substrate under electrode 6. Therefore, since bias charge can be injected to all rows by one charge injection characteristic, uniform bias charge can be injected to all the surface of photoelectric conversion part 1. |
