| 主权项 |
1. A device structure providing contact to conductive layers via a deep trench structure, the device structure comprising:
a first dielectric layer including a flat top surface around a first opening, the first opening having walls on the first dielectric layer; a first conductive layer deposited over the flat top surface and the first opening of the first dielectric layer; a second dielectric layer deposited on the first conductive layer, the second dielectric layer including a flat top surface around a second opening having walls on the second dielectric layer, wherein the first conductive layer is located between the first and second dielectric layer; a second conductive layer deposited over the second dielectric layer and the first and second openings; a semiconductor layer deposited on the second conductive layer, the semiconductor layer being continuous on the flat top surface of the first and second dielectric layers, the semiconductor layer continuously covering a lower portion of the walls of the first and second openings, and being discontinuous on an upper portion of the walls between the lower portion of the walls and the flat top surfaces; and a top electrode layer deposited on the semiconductor layer, the top electrode layer in contact with the second conductive layer on the upper portion of the walls of the first or second openings. |
