发明名称 |
Simplified process for vertical LED manufacturing |
摘要 |
Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided. |
申请公布号 |
US9502609(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201514744602 |
申请日期 |
2015.06.19 |
申请人 |
International Business Machines Corporation |
发明人 |
Bedell Stephen W.;Fogel Keith E.;Lauro Paul A.;Sadana Devendra K. |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
Michael J. Chang, LLC |
代理人 |
Alexanian Vazken;Michael J. Chang, LLC |
主权项 |
1. A layer transfer method for an optical device semiconductor material, comprising the steps of:
forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material, wherein the metal stressor layer is deposited to a thickness sufficient to permit mechanically-assisted spalling of the optical device semiconductor material to occur; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate and with it a stack comprising the metal stressor layer and the optical device semiconductor material; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer, wherein the second substrate comprises a metal selected from the group consisting of: nickel, copper, silver, aluminum, zinc, tin, and combinations thereof. |
地址 |
Armonk NY US |