发明名称 Semiconductor device, method of manufacturing the same, display unit, and electronic apparatus
摘要 A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film.
申请公布号 US9502492(B2) 申请公布日期 2016.11.22
申请号 US201414312126 申请日期 2014.06.23
申请人 Joled Inc. 发明人 Terai Yasuhiro;Toyomura Naobumi
分类号 H01L29/10;H01L49/02;H01L27/12 主分类号 H01L29/10
代理机构 K&L Gates LLP 代理人 K&L Gates LLP
主权项 1. A semiconductor device, comprising: a capacitor including a first insulating film between a lower electrode and an upper electrode; a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film; a first wiring; and a second wiring, part or all of the second wiring being opposed to the first wiring, wherein a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the first laminated structure.
地址 Tokyo JP