发明名称 |
Semiconductor device, method of manufacturing the same, display unit, and electronic apparatus |
摘要 |
A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film. |
申请公布号 |
US9502492(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201414312126 |
申请日期 |
2014.06.23 |
申请人 |
Joled Inc. |
发明人 |
Terai Yasuhiro;Toyomura Naobumi |
分类号 |
H01L29/10;H01L49/02;H01L27/12 |
主分类号 |
H01L29/10 |
代理机构 |
K&L Gates LLP |
代理人 |
K&L Gates LLP |
主权项 |
1. A semiconductor device, comprising:
a capacitor including a first insulating film between a lower electrode and an upper electrode; a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film; a first wiring; and a second wiring, part or all of the second wiring being opposed to the first wiring, wherein a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the first laminated structure. |
地址 |
Tokyo JP |