Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

摘要

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

主权项

1. A solid-state imaging device comprising:
a substrate; first and second photoelectric converters included in the substrate; a groove portion disposed between and laterally separating the first and second photoelectric converters in a depth direction in the substrate; and an element separating unit provided in the groove portion and formed such that a portion of the element separating unit contacts a well layer at a side opposite from a light-input side of the substrate, the element separating unit including an insulating film having a fixed charge and coating a portion of a semiconductive, inwardly facing inner wall face of the groove portion, the portion of the semiconductive, inwardly facing inner wall face extending in a depth direction of the groove portion, the element separating unit contacting a laterally central portion of the well layer along a surface of the well layer, the surface of the well layer substantially extending parallel to a main light input side surface of the substrate.