Method for core and in/out-put device reliability improve at high-K last process

摘要

A method for fabricating a semiconductor device includes providing a semiconductor substrate, forming on the semiconductor substrate a dummy gate interface layer and a dummy gate of a core device and a gate interface layer and a dummy gate of an IO device, removing the dummy gates of the core and IO devices, removing the dummy gate interface layer of the core device, forming a gate interface layer in the original location of the removed dummy gate interface layer, forming a high-k dielectric layer each on the gate interface layer of the core and IO devices, and submitting the semiconductor substrate to a high-pressure fluorine annealing. The high-pressure fluorine annealing causes the gate interface layer and the high-k dielectric layer of the core and IO devices to be doped with fluoride ions.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate; forming on the semiconductor substrate a dummy gate interface layer and a dummy gate of a core device and a gate interface layer and a dummy gate of an IO device; removing the dummy gate of the core device and the dummy gate of the IO device; removing the dummy gate interface layer of the core device; forming a gate interface layer in the original location of the removed dummy gate interface layer; submitting the semiconductor substrate to a first high-pressure fluorine annealing process to cause fluoride ions to be implanted into the gate interface layer of the core device and the gate interface layer of the IO device; forming a high-k dielectric layer each directly on the gate interface layer of the core device and directly on the gate interface layer of the IO device, submitting the semiconductor substrate to a second high-pressure fluorine annealing process under a pressure greater than one atmospheric pressure to cause fluoride ions to be implanted onto the high-k dielectric layer of the core device and the high-k dielectric layer of the IO device.